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Because the electron mobility is higher than the hole mobility for all semiconductor materials, a given bipolar n–p–n transistor tends to be swifter than an equivalent p–n–p transistor. GaAs has the highest electron mobility of the three semiconductors. It is for this reason that GaAs is used in high-frequency applications. A relatively recent FET development, the high-electron-mobility transistor (HEMT), has a heterostructure (junction between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has twice the electron mobility of a GaAs-metal barrier junction. Because of their high speed and low noise, HEMTs are used in satellite receivers working at frequencies around 12 GHz. HEMTs based on gallium nitride and aluminium gallium nitride (AlGaN/GaN HEMTs) provide a still higher electron mobility and are being developed for various applications.

What semiconductor has the highest electron mobility?
Answer: GaAs
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The resulting Treaty of Schönbrunn in October 1809 was the harshest that France had imposed on Austria in recent memory. Metternich and Archduke Charles had the preservation of the Habsburg Empire as their fundamental goal, and to this end they succeeded by making Napoleon seek more modest goals in return for promises of friendship between the two powers. Nevertheless, while most of the hereditary lands remained a part of the Habsburg realm, France received Carinthia, Carniola, and the Adriatic ports, while Galicia was given to the Poles and the Salzburg area of the Tyrol went to the Bavarians. Austria lost over three million subjects, about one-fifth of her total population, as a result of these territorial changes. Although fighting in Iberia continued, the War of the Fifth Coalition would be the last major conflict on the European continent for the next three years.

In the Treaty of Schönbrunn, what territory was given to the Poles?
Answer: Galicia
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In 1906, the tungsten filament was introduced. Tungsten metal was initially not available in a form that allowed it to be drawn into fine wires. Filaments made from sintered tungsten powder were quite fragile. By 1910, a process was developed by William D. Coolidge at General Electric for production of a ductile form of tungsten. The process required pressing tungsten powder into bars, then several steps of sintering, swaging, and then wire drawing. It was found that very pure tungsten formed filaments that sagged in use, and that a very small "doping" treatment with potassium, silicon, and aluminium oxides at the level of a few hundred parts per million greatly improved the life and durability of the tungsten filaments.

What other materials were combined with tungsten?
Answer:
potassium, silicon, and aluminium oxides